DUAL-GATE SILICON PERMEABLE-BASE TRANSISTORS BUILT ON LPVPE-GROWN MATERIAL

被引：4

作者：

GRUHLE, A

VESCAN, L

BENEKING, H

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 09期

关键词：

D O I：

10.1049/el:19870322

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：447 / 449

页数：3

共 7 条

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[7] A COMPARISON OF ETCHED-GEOMETRY AND OVERGROWN SILICON PERMEABLE BASE TRANSISTORS BY TWO-DIMENSIONAL NUMERICAL SIMULATIONS [J].

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