A COMPARISON OF ETCHED-GEOMETRY AND OVERGROWN SILICON PERMEABLE BASE TRANSISTORS BY TWO-DIMENSIONAL NUMERICAL SIMULATIONS

被引：22

作者：

VOJAK, BA

ALLEY, GD

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 08期

关键词：

D O I：

10.1109/T-ED.1983.21230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：877 / 883

页数：7

共 16 条

[1] HIGH-VOLTAGE TWO-DIMENSIONAL SIMULATIONS OF PERMEABLE BASE TRANSISTORS [J].

ALLEY, GD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (01) :52-60

[2]

ALLEY GD, 1972, THESIS U KANSAS LAWR

[3] THE PERMEABLE BASE TRANSISTOR AND ITS APPLICATION TO LOGIC-CIRCUITS [J].

BOZLER, CO ;

ALLEY, GD .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :46-52

[4] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J].

BOZLER, CO ;

ALLEY, GD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1128-1141

[5]

BOZLER CO, 1979, 7TH P BIEN CORN C AC, P33

[6] BARRIER MODE BEHAVIOR OF A JUNCTION FET AT LOW DRAIN CURRENTS [J].

BREWER, RJ .

SOLID-STATE ELECTRONICS, 1975, 18 (11) :1013-1017

[7]

Chi J. Y., 1982, International Electron Devices Meeting. Technical Digest, P646

[8] BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE [J].

EASTMAN, LF ;

STALL, R ;

WOODARD, D ;

DANDEKAR, N ;

WOOD, CEC ;

SHUR, MS ;

BOARD, K .

ELECTRONICS LETTERS, 1980, 16 (13) :524-525

[9] THRESHOLD VOLTAGES OF NORMALLY OFF MESFETS [J].

JUTZI, W ;

REISER, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (03) :314-&

[10] ION-BEAM ASSISTED ETCHING FOR GAAS DEVICE APPLICATIONS [J].

LINCOLN, GA ;

GEIS, MW ;

MAHONEY, LJ ;

CHU, A ;

VOJAK, BA ;

NICHOLS, KB ;

PIACENTINI, WJ ;

EFREMOW, N ;

LINDLEY, WT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :786-789

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