STRESS DEPENDENCE OF THE NITROGEN-BOUND EXCITONS IN GAP-N

[11] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (04) : 184 - +

[12] EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 1039 - 1051

[13] Dean P. J., 1979, Excitons, P55, DOI 10.1007/978-3-642-81368-9_3

[14] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &

[15] INTERFERENCE BETWEEN INTERMEDIATE STATES IN OPTICAL PROPERTIES OF NITROGEN-DOPED GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1967, 158 (03): : 748 - &

[16] NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE [J]. PHYSICAL REVIEW B, 1977, 16 (04): : 1597 - 1615

[17] ELECTRONIC STATES ASSOCIATED WITH THE SUBSTITUTIONAL NITROGEN IMPURITY IN GAPXAS1-X [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (03): : 525 - 539

[18] TEMPERATURE-DEPENDENCE OF OPTICAL-ABSORPTION OF BOUND EXCITONS IN GAP - N AND GAP - S CRYSTALS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 38 (03) : 791 - 796

[19] THEORY OF BOUND-STATES INDUCED BY DISORDER AND ISOELECTRONIC POTENTIALS - GA(AS,P)=N [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 802 - 811

[20] DIRECT STUDY OF NATURE OF NITROGEN BOUND-STATES IN GAAS1-XPX-N [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (06) : 375 - 378

[11] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (04) : 184 - +

[12] EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 1039 - 1051

[13] Dean P. J., 1979, Excitons, P55, DOI 10.1007/978-3-642-81368-9_3

[14] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &

[15] INTERFERENCE BETWEEN INTERMEDIATE STATES IN OPTICAL PROPERTIES OF NITROGEN-DOPED GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1967, 158 (03): : 748 - &

[16] NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE [J]. PHYSICAL REVIEW B, 1977, 16 (04): : 1597 - 1615

[17] ELECTRONIC STATES ASSOCIATED WITH THE SUBSTITUTIONAL NITROGEN IMPURITY IN GAPXAS1-X [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (03): : 525 - 539

[18] TEMPERATURE-DEPENDENCE OF OPTICAL-ABSORPTION OF BOUND EXCITONS IN GAP - N AND GAP - S CRYSTALS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 38 (03) : 791 - 796

[19] THEORY OF BOUND-STATES INDUCED BY DISORDER AND ISOELECTRONIC POTENTIALS - GA(AS,P)=N [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 802 - 811

[20] DIRECT STUDY OF NATURE OF NITROGEN BOUND-STATES IN GAAS1-XPX-N [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (06) : 375 - 378