EXPANSION OF THE ELECTRON-HOLE PLASMA IN SI - A PICOSECOND TIME-RESOLVED RAMAN PROBE

被引：14

作者：

TSEN, KT

SANKEY, OF

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.37.4321

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4321 / 4324

页数：4

共 11 条

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TRANKLE, G
PILKUHN, M
[J]. JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) : 67 - 81
[3] OPTICAL-PROPERTIES OF FAST-DIFFUSING SOLID-STATE PLASMAS
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SCHWEIZER, H
MAHLER, G
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[4] ELECTRONIC RAMAN-SCATTERING AND METAL-INSULATOR-TRANSITION IN DOPED SILICON
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LAI, S
KLEIN, MV
[J]. PHYSICAL REVIEW B, 1976, 13 (12): : 5448 - 5464
[5] Klein M.V., 1975, LIGHT SCATTERING SOL
[6] OPTICAL TIME-OF-FLIGHT INVESTIGATION OF THE EXCITON TRANSPORT IN SILICON
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HILLMER, H
FORCHEL, A
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1480 - 1485
[7] STERANKA FM, 1986, PHYS REV B, V34, P1014, DOI 10.1103/PhysRevB.34.1014
[8] PHONON-WIND DRIVEN ELECTRON-HOLE PLASMA IN SI
STERANKA, FM
WOLFE, JP
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (22) : 2181 - 2184
[9] PICOSECOND TIME-RESOLVED RAMAN STUDIES OF THE EXPANSION OF THE ELECTRON-HOLE PLASMA IN SI
TSEN, KT
[J]. PHYSICAL REVIEW B, 1987, 35 (08): : 4134 - 4136
[10] CARRIER DIFFUSION IN SEMICONDUCTORS SUBJECT TO LARGE GRADIENTS OF EXCITED CARRIER DENSITY
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VANVECHTEN, JA
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5551 - 5554