LOW-TEMPERATURE (250-DEGREES-C) SELECTIVE EPITAXY OF GAAS FILMS AND P-N-JUNCTION BY LASER-ASSISTED METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

KARAM, NH ^{[1
]}

LIU, H ^{[1
]}

YOSHIDA, I ^{[1
]}

BEDAIR, SM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 09期

关键词：

D O I：

10.1063/1.99827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：767 / 769

页数：3

共 11 条

[1]

AOYOGI Y, 1985, APPL PHYS LETT, V47, P95

[2] LASER SELECTIVE DEPOSITION OF GAAS ON SI [J].

BEDAIR, SM ;

WHISNANT, JK ;

KARAM, NH ;

TISCHLER, MA ;

KATSUYAMA, T .

APPLIED PHYSICS LETTERS, 1986, 48 (02) :174-176

[3] LASER SELECTIVE DEPOSITION OF III-V-COMPOUNDS ON GAAS AND SI SUBSTRATES [J].

BEDAIR, SM ;

WHISNANT, JK ;

KARAM, NH ;

GRIFFIS, D ;

ELMASRY, NA ;

STADELMAIER, HH .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :229-234

[4] DIRECT WRITING OF GAAS MONOLAYERS BY LASER-ASSISTED ATOMIC LAYER EPITAXY [J].

KARAM, NH ;

LIU, H ;

YOSHIDA, I ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1988, 52 (14) :1144-1146

[5] LASER DIRECT WRITING OF SINGLE-CRYSTAL III-V COMPOUNDS ON GAAS [J].

KARAM, NH ;

ELMASRY, NA ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1986, 49 (14) :880-882

[6]

KARAM NH, 1987, MATER RES SOC S P, V75, P241

[7]

KARAM NH, 1988, MATER RES SOC S P, V101, P285

[8]

KARAM NH, 1988, 4TH P INT C MET VAP

[9] TEMPERATURE RISE INDUCED BY A LASER-BEAM [J].

LAX, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3919-3924

[10] EFFECTS OF VERY LOW GROWTH-RATES ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES [J].

METZE, GM ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :818-820

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