MATRIX EFFECTS IN SIMS DEPTH PROFILES OF SIGE SUPERLATTICES

被引：14

作者：

JACKMAN, JA ^{[1
]}

DIGNARDBAILEY, L ^{[1
]}

STOREY, RS ^{[1
]}

MACPHERSON, C ^{[1
]}

ROLFE, S ^{[1
]}

VANDERZWAN, L ^{[1
]}

JACKMAN, TE ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,DEPT PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 45卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(90)90907-C

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The dependence of the secondary ion yield of Ge and Si atoms in Si1-xGex layers, where x varies from 0.005 to 0.75, has been measured for incident sputtering beams of O+2 and Cs+ of varying energy. For the O+2 beam, the positive ion yield per atom was constant for Ge concentrations < 30%. At higher Ge concentrations, the yield increased. Using Cs+, the behaviour was significantly different. For positive ion formation, the yield began to increase for Ge concentrations > 5%, whereas the negative ion yield decreased significantly. © 1990.

引用

页码：592 / 596

页数：5

共 21 条

[1] THEORETICAL-ANALYSIS OF RAMAN-SPECTRA OF FINITE-STAGE SI/SI-GE FIBONACCI SUPERLATTICES
AERS, GC
DHARMAWARDANA, MWC
SCHWARTZ, GP
BEVK, J
[J]. PHYSICAL REVIEW B, 1989, 39 (02): : 1092 - 1096
[2] GROWTH AND CHARACTERIZATION OF SI1-XGEX AND GE EPILAYERS ON (100) SI
BARIBEAU, JM
JACKMAN, TE
HOUGHTON, DC
MAIGNE, P
DENHOFF, MW
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (12) : 5738 - 5746
[3] X-RAY DOUBLE-CRYSTAL CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIALLY GROWN SI/SI1-XGEX STRAINED-LAYER SUPERLATTICES
BARIBEAU, JM
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 105 - 107
[4] BENNINGHOVEN A, 1986, SECONDARY ION MASS S, P296
[5] INTERCOMPARISON OF ABSOLUTE STANDARDS FOR RBS STUDIES
COHEN, C
DAVIES, JA
DRIGO, AV
JACKMAN, TE
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 147 - 148
[6] CALIBRATION OF THE HARWELL SERIES-II BI-IMPLANTED RBS STANDARDS
DAVIES, JA
JACKMAN, TE
ESCHBACH, HL
DOBMA, W
WATJEN, U
CHIVERS, D
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 238 - 240
[7] STRUCTURAL-PROPERTIES OF ULTRATHIN ARSENIC-DOPED LAYERS IN SILICON
DENHOFF, MW
JACKMAN, TE
MCCAFFREY, JP
JACKMAN, JA
LENNARD, WN
MASSOUMI, G
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (14) : 1332 - 1334
[8] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA
DOOLITTLE, LR
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) : 344 - 351
[9] A SEMIAUTOMATIC ALGORITHM FOR RUTHERFORD BACKSCATTERING ANALYSIS
DOOLITTLE, LR
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 227 - 231
[10] FRENZEL E, 1985, NUCL INSTRUM METH B, V15, P183

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