FINITE INTERFACE EFFECTS FOR THIN GAINAS/INP QUANTUM-WELLS GROWN BY LP-MOVPE WITH A GROWTH INTERRUPTION SEQUENCE

被引：40

作者：

CAMASSEL, J ^{[1
]}

LAURENTI, JP ^{[1
]}

JUILLAGUET, S ^{[1
]}

REINHARDT, F ^{[1
]}

WOLTER, K ^{[1
]}

KURZ, H ^{[1
]}

GRUTZMACHER, D ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,W-5100 AACHEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90518-A

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A prerequisite for growing quantum wells at the industrial level is to control the interface roughness. This is a dominant problem for very thin films and, in this respect, growth interruption sequences have been proposed. In this work, we investigate the interface layers, produced between two InP barriers, by a growth interruption sequence of 8 s: 6 s are under phosphine and 4 s under arsine. We find the resulting build-up of ultrathin (approximately-2 MLs thick) layers of InAsP, strained between the two limiting barriers.

引用

页码：543 / 548

页数：6

共 12 条

[1] LOW-TEMPERATURE EXCITON TRAPPING ON INTERFACE DEFECTS IN SEMICONDUCTOR QUANTUM WELLS
BASTARD, G
DELALANDE, C
MEYNADIER, MH
FRIJLINK, PM
VOOS, M
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7042 - 7044
[2] NONCOMMUTATIVE STRUCTURE OF GAAS QUANTUM WELL INTERFACES AND INEQUIVALENT INTERFACE IMPURITY INCORPORATION
BIMBERG, D
BAUER, RK
OERTEL, D
MARS, D
MILLER, JN
[J]. JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 93 - 96
[3] OBSERVATION OF ONE MONOLAYER SIZE FLUCTUATIONS IN A GAAS/GAALAS SUPERLATTICE
DEVEAUD, B
EMERY, JY
CHOMETTE, A
LAMBERT, B
BAUDET, M
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1078 - 1080
[4] INTERFACE ROUGHNESS AND CHARGE CARRIER RECOMBINATION LIFETIMES IN GAINAS/INP QUANTUM WELLS GROWN BY LP-MOVPE
ENGEL, M
BAUER, RK
BIMBERG, D
GRUTZMACHER, D
JURGENSEN, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 359 - 364
[5] EXCITONIC TRANSITIONS IN STRAINED-LAYER INXGA1-XAS/INP QUANTUM WELLS
GERSHONI, D
TEMKIN, H
PANISH, MB
HAMM, RA
[J]. PHYSICAL REVIEW B, 1989, 39 (08): : 5531 - 5534
[6] GURTZMACHER D, 1990, J ELECTRON MATER, V19, P471
[7] INFLUENCE OF THE GAS SWITCHING SEQUENCE ON THE OPTICAL-PROPERTIES OF ULTRATHIN INGAAS/INP QUANTUM-WELLS
LANDGREN, G
OJALA, P
EKSTROM, O
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 573 - 577
[8] OPTICAL-PROPERTIES OF GAINAS INP MULTI-QUANTUM-WELLS GROWN BY LOW-PRESSURE MOVPE
LAURENTI, JP
CAMASSEL, J
REYNES, B
GRUTZMACHER, D
WOLTER, K
KURZ, H
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (03) : 222 - 228
[9] ATOMIC LAYER EPITAXY - A NEW TOOL FOR NOVEL MODULATED SEMICONDUCTOR STRUCTURES
USUI, A
WATANABE, H
[J]. JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 21 - 28
[10] INTRINSIC RADIATIVE RECOMBINATION FROM QUANTUM STATES IN GAAS-A-LAMBDA-XGA1-XAS MULTI-QUANTUM WELL STRUCTURES
WEISBUCH, C
MILLER, RC
DINGLE, R
GOSSARD, AC
WIEGMANN, W
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (03) : 219 - 222

← 1 2 →