EXTRACTING THE SERIES RESISTANCE AND EFFECTIVE CHANNEL-LENGTH OF SHORT-CHANNEL MOSFETS AT LIQUID-NITROGEN TEMPERATURE

被引：16

作者：

SANCHEZ, FJG

ORTIZCONDE, A

NUNEZ, MG

ANDERSON, RL

机构：

[1] INST INGN, CARACAS 1040A, VENEZUELA

[2] UNIV VERMONT, CRYOELECTR LAB, BURLINGTON, VT 05405 USA

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 12期

关键词：

D O I：

10.1016/0038-1101(94)90061-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a simple method to extract the effective channel length and the gate voltage dependent series resistance of p-channel MOSFETs, The method is used at room and at liquid nitrogen temperatures on devices with mask channel lengths in the range of 0.6-2.0 mu m. The good agreement found at 77 and 300 K between the experimental drain current-voltage characteristics of the devices and those computed from the extracted parameter verifies the validity of the method.

引用

页码：1943 / 1948

页数：6

共 19 条

[1]

ASHTON RA, 1993, P IEEE INT C MICR TE, V6, P133

[2] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J].