SILICON CHARGE ELECTRODE ARRAY FOR INK JET PRINTING

被引：16

作者：

KUHN, L ^{[1
]}

BASSOUS, E ^{[1
]}

LANE, R ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 10期

关键词：

D O I：

10.1109/T-ED.1978.19261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1257 / 1260

页数：4

共 10 条

[1] INK JET PRINTING NOZZLE ARRAYS ETCHED IN SILICON [J].

BASSOUS, E ;

TAUB, HH ;

KUHN, L .

APPLIED PHYSICS LETTERS, 1977, 31 (02) :135-137

[2] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J].

BASSOUS, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1178-1185

[3]

BASSOUS E, 1977, Patent No. 4047184

[4] DROP CHARGING AND DEFLECTION IN AN ELECTROSTATIC INK JET PRINTER [J].

FILLMORE, GL ;

BUEHNER, WL ;

WEST, DL .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (01) :37-47

[5] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J].

FINNE, RM ;

KLEIN, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :965-&

[6] INK JET PRINTING [J].

KAMPHOEFNER, FJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (04) :584-+

[7] CONTACT METALLURGY FOR SHALLOW JUNCTION SI DEVICES [J].

KIRCHER, CJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5394-5399

[8]

KUHN L, 1976, Patent No. 3984843

[9]

Myers R. A., 1975, 2nd USA-Japan Computer Conference Proceedings, P131

[10] HIGH FREQUENCY RECORDING WITH ELECTROSTATICALLY DEFLECTED INK JETS [J].

SWEET, RG .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (02) :131-&

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