CURRENT-VOLTAGE CHARACTERISTICS OF POROUS-SILICON LAYERS

被引：73

作者：

DIMITROV, DB

机构：

[1] Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia-1784

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.51.1562

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The current-voltage characteristics of porous-silicon structures are presented and discussed. Evidence is given that the forward and reverse currents show Schottky-junction-like behavior. Experimental measurements of reverse I-V curves at different ambient humidities demonstrate that the reverse current depends strongly on this parameter. The results are discussed in the light of generation-recombination processes in the porous-silicon depletion region. The presence of an inflection point in the reverse I-V curves is explained by the energy-band-gap difference between porous silicon and the crystalline silicon substrate. © 1995 The American Physical Society.

引用

页码：1562 / 1566

页数：5

共 29 条

[1] INVESTIGATIONS OF THE ELECTRICAL-PROPERTIES OF POROUS SILICON
ANDERSON, RC
MULLER, RS
TOBIAS, CW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (11) : 3406 - 3411
[2] BESHKOV G, 1993, ELECTRON ELECTROTECH, V10, P43
[3] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION
BRANDT, MS
FUCHS, HD
STUTZMANN, M
WEBER, J
CARDONA, M
[J]. SOLID STATE COMMUNICATIONS, 1992, 81 (04) : 307 - 312
[4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
CANHAM, LT
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
[5] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[6] POTENTIAL BARRIERS TO ELECTRON TUNNELLING IN ULTRATHIN FILMS OF SIO2
CARD, HC
[J]. SOLID STATE COMMUNICATIONS, 1974, 14 (10) : 1011 - 1014
[7] DIMITROV DB, IN PRESS J PHYS
[8] VISIBLE LUMINESCENCE FROM SILICON-WAFERS SUBJECTED TO STAIN ETCHES
FATHAUER, RW
GEORGE, T
KSENDZOV, A
VASQUEZ, RP
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (08) : 995 - 997
[9] EVIDENCE FOR QUANTUM CONFINEMENT IN THE PHOTOLUMINESCENCE OF POROUS SI AND SIGE
GARDELIS, S
RIMMER, JS
DAWSON, P
HAMILTON, B
KUBIAK, RA
WHALL, TE
PARKER, EHC
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (17) : 2118 - 2120
[10] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
FITZGERALD, DJ
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +

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