N-CHANNEL MOSFET BREAKDOWN CHARACTERISTICS AND MODELING FOR P-WELL TECHNOLOGIES

被引：9

作者：

BEITMAN, BA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 11期

关键词：

D O I：

10.1109/16.7407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1935 / 1941

页数：7

共 13 条

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