INVERSION-CONTROLLED SWITCHING MECHANISM OF MISS DEVICES

被引：24

作者：

SARRABAYROUSE, G ^{[1
]}

BUXO, J ^{[1
]}

OWEN, AE ^{[1
]}

YAGUE, AM ^{[1
]}

SABAA, JP ^{[1
]}

机构：

[1] CNRS,AUTOMAT & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 03期

关键词：

MISS DEVICES;

D O I：

10.1049/ip-i-1.1980.0023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experiments are reported on the switching characteristics of m. i. Si(n)Si(p** plus ) devices with a thin oxide insulating layer (I). The influence of temperature, light and carier injection into the n-layer is analyzed. The theoretical interpretation is based on a model which takes into account the multiplication mechanism which occurs at the Si-SiO//2 interface when it is inverted.

引用

页码：119 / 125

页数：7

共 21 条

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