SURFACE STATES IN TUNNELABLE MOS STRUCTURES

被引：14

作者：

HIROSE, M ^{[1
]}

HIRAKI, S ^{[1
]}

NAKASHITA, T ^{[1
]}

OSAKA, Y ^{[1
]}

机构：

[1] HIROSHIMA UNIV,FAC ENGN,DEPT ELECT ENGN,HIROSHIMA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 07期

关键词：

D O I：

10.1143/JJAP.14.999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：999 / 1004

页数：6

共 11 条

[1] TUNNELING IN METAL-OXIDE-SILICON STRUCTURES
DAHLKE, WE
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 865 - &
[2] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[3] THEORY OF TUNNELING INTO INTERFACE STATES
FREEMAN, LB
DAHLKE, WE
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1483 - +
[4] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING
GOETZBERGER, A
HEINE, V
NICOLLIAN, EH
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 95 - +
[5] TUNNELING FROM METAL TO SEMICONDUCTORS
GRAY, PV
[J]. PHYSICAL REVIEW, 1965, 140 (1A): : A179 - +
[6] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
BROWN, DM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &
[7] CALCULATIONS OF ENERGY-LEVELS OF OXYGEN AND SILICON VACANCIES AT SI-SIO2 INTERFACE
IIZUKA, T
SUGANO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (01) : 73 - 79
[8] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI
KAR, S
DAHLKE, WE
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 221 - +
[9] FREQUENCY-RESPONSE OF SURFACE STATE ADMITTANCE IN WEAKLY INVERTED THIN SIO2-SI MOS CAPACITORS
KATTO, H
SAH, CT
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (02): : 417 - +
[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

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