MODIFICATION OF SI FIELD EMITTER SURFACES BY CHEMICAL CONVERSION TO SIC

被引：8

作者：

LIU, J

SON, UT

STEPANOVA, AN

CHRISTENSEN, KN

WOJAK, GJ

GIVARGIZOV, EI

BACHMANN, KJ

HREN, JJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon field emitters have been modified -by coating with a thin SiC film through a chemical conversion process. Silicon carbide was formed on Si emitter surfaces by reacting with ethylene gas at temperatures between 850 and 950-degrees-C using pressures as high as 5 X 10(-3) Torr. The thickness of the coatings ranged from 2 to 500 nm, determined by a combination of reaction time, pressure, and temperature. Stable emission currents above 10 mu angstrom were measured from individual SiC coated emitters.

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页码：717 / 721

页数：5

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