III, V-HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：3

作者：

BAILBE, JP

MARTY, A

REY, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 11期

关键词：

D O I：

10.1016/0038-1101(87)90082-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1159 / 1169

页数：11

共 22 条

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[7]

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[10] III-V SEMICONDUCTORS ON SI SUBSTRATES - NEW DIRECTIONS FOR HETEROJUNCTION ELECTRONICS [J].

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