FREQUENCY-RESPONSE OF GOLD IMPURITY CENTERS IN DEPLETION LAYER OF REVERSE-BIASED SILICON P+N JUNCTIONS

被引：29

作者：

ZOHTA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 04期

关键词：

D O I：

10.1063/1.1661385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1713 / +

页数：1

共 12 条

[1] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J].

BEMSKI, G .

PHYSICAL REVIEW, 1958, 111 (06) :1515-1518

[2] A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS [J].

COPELAND, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :445-&

[3] GOLD AS A RECOMBINATION CENTRE IN SILICON [J].

FAIRFIELD, JM ;

GOKHALE, BV .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :685-+

[4] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[5] GIANT TRAPS [J].

LAX, M .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :66-73

[6]

PEREL VI, 1968, SOV PHYS SEMICOND+, V1, P1403

[7] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J].

SAH, CT ;

FORBES, L ;

ROSIER, LI ;

TASCH, AF ;

TOLE, AB .

APPLIED PHYSICS LETTERS, 1969, 15 (05) :145-+

[8] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J].

SAH, CT ;

REDDI, VGK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :345-+

[9] EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE [J].

SCHIBLI, E ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1968, 11 (03) :323-+

[10] CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON [J].

SENECHAL, RR ;

BASINSKI, J .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :3723-+

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