ENHANCEMENT OF SI HOLE MOBILITY IN COUPLED DELTA-DOPED WELLS

被引:20
作者
CARNS, TK
ZHENG, X
WANG, KL
机构
[1] Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024-1594
关键词
D O I
10.1063/1.109047
中图分类号
O59 [应用物理学];
学科分类号
摘要
When two or more highly doped, thin (delta-doped) layers are placed in close proximity to one another it is found that an enhancement of the hole mobility occurs over that of a single delta (delta) layer as well as that of the Si bulk case. Hall mobilities of up to 2400 cm2 V-1 s-1 at 77 K have been obtained with delta layers spaced 200 angstrom apart compared to a mobility of 280 cm2 V-1 s-1 for the single delta layer. The conductivity of the coupled delta-doped well exceeds that of comparable uniformly doped bulk layers, especially at lower temperatures. These types of structures show great promise in obtaining high mobilities with high carrier densities for semiconductors grown by simple homoepitaxy.
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页码:3455 / 3457
页数:3
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