EFFECTS OF DEEP LEVELS ON THE OPTOELECTRONIC PROPERTIES OF INGAAS/INALAS MULTIQUANTUM-WELL STRUCTURES

被引：8

作者：

NOJIMA, S

NAKASHIMA, K

KAWAMURA, Y

ASAHI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 06期

关键词：

D O I：

10.1063/1.341093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1955 / 1960

页数：6

共 12 条

[1] ELECTRONIC TRANSPORT AND DEPLETION OF QUANTUM-WELLS BY TUNNELING THROUGH DEEP LEVELS IN SEMICONDUCTOR SUPERLATTICES [J].

CAPASSO, F ;

MOHAMMED, K ;

CHO, AY .

PHYSICAL REVIEW LETTERS, 1986, 57 (18) :2303-2306

[2]

HONG P, 1986, 28TH P EL MAT C, P25

[3] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[4] NEW HIGH-SPEED LONG-WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS MULTIQUANTUM WELL AVALANCHE PHOTODIODES [J].

MOHAMMED, K ;

CAPASSO, F ;

ALLAM, J ;

CHO, AY ;

HUTCHINSON, AL .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :597-599

[5]

NAKASHIMA K, IN PRESS PHYS STATUS

[6] DEEP ELECTRON TRAPPING CENTER IN SI-DOPED INGAAIP GROWN BY MOLECULAR-BEAM EPITAXY [J].

NOJIMA, S ;

TANAKA, H ;

ASAHI, H .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) :3489-3494

[7] DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITY BETWEEN IN0.53GA0.47AS [J].

PENG, CK ;

KETTERSON, A ;

MORKOC, H ;

SOLOMON, PM .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1709-1712

[8] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].

PEOPLE, R ;

WECHT, KW ;

ALAVI, K ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :118-120

[9] METASTABILITY AND POLARIZATION EFFECTS IN A PN HETEROJUNCTION DEVICE DUE TO DEEP STATES [J].

STAVOLA, M ;

CAPASSO, F ;

NABITY, JC ;

ALAVI, K ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :997-999

[10] 1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TEMKIN, H ;

ALAVI, K ;

WAGNER, WR ;

PEARSALL, TP ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :845-847

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