METASTABILITY AND POLARIZATION EFFECTS IN A PN HETEROJUNCTION DEVICE DUE TO DEEP STATES

被引：11

作者：

STAVOLA, M

CAPASSO, F

NABITY, JC

ALAVI, K

CHO, AY

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 15期

关键词：

D O I：

10.1063/1.96636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：997 / 999

页数：3

共 12 条

[1] NEW LOW DARK CURRENT, HIGH-SPEED AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTODIODE BY MOLECULAR-BEAM EPITAXY FOR LONG WAVELENGTH FIBER OPTIC COMMUNICATION-SYSTEMS [J].

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PARSEY, JM .

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[2] HETEROJUNCTION-INDUCED PHENOMENA IN HALL-EFFECT AND PHOTOCONDUCTIVITY MEASUREMENTS OF EPITAXIAL ALXGA1-XAS [J].

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KOCOT, C .

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DRUMMOND, TJ ;

KOPP, W ;

FISCHER, R ;

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THORNE, RE ;

CHO, AY .

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[4] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

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LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[5]

LEVINSON M, 1983, PHYS REV B, V27, P6217

[6] ELECTRIC-FIELD DEPENDENT CATHODOLUMINESCENCE OF III-V-COMPOUND HETEROSTRUCTURES - A NEW INTERFACE CHARACTERIZATION TECHNIQUE [J].

MAGNEA, N ;

PETROFF, PM ;

CAPASSO, F ;

LOGAN, RA ;

ALAVI, K ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1074-1076

[7] INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN [J].

NISHIDA, K ;

TAGUCHI, K ;

MATSUMOTO, Y .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :251-253

[8] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].

PEOPLE, R ;

WECHT, KW ;

ALAVI, K ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :118-120

[9] HALL-EFFECT ANALYSIS OF PERSISTENT PHOTOCURRENTS IN N-GAAS LAYERS [J].

QUEISSER, HJ ;

THEODOROU, DE .

PHYSICAL REVIEW LETTERS, 1979, 43 (05) :401-404

[10]

QUEISSER HJ, 1985, 17TH P INT C PHYS SE, P1303

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