AUA1 COMPOUND FORMATION BY THIN-FILM INTERACTIONS

被引：25

作者：

MAJNI, G ^{[1
]}

OTTAVIANI, G ^{[1
]}

GALLI, E ^{[1
]}

机构：

[1] UNIV MODENA,IST MINERAL,I-41100 MODENA,ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1979年 / 47卷 / 04期

关键词：

D O I：

10.1016/0022-0248(79)90143-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The AuAl compound was obtained by low temperature (190-250°C) heat treatment of a thin gold and aluminium film. The compound was identified by X-ray diffraction and its thickness was measured by 4He MeV ion backscattering. The AuAl layer grows at a fixed temperature as a function of (time) 1 2. The activation energy of the growth compound is 1.2 eV. This compound is stable up to the maximum investigated temperature (≈500°C). © 1979.

引用

页码：583 / 588

页数：6

共 14 条

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