EFFECT OF SURFACE ENCAPSULATION AND AS4 OVERPRESSURE ON SI DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN GAAS, ALXGA1-XAS, AND ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURES

被引：6

作者：

GUIDO, LJ

PLANO, WE

NAM, DW

HOLONYAK, N

BAKER, JE

BURNHAM, RD

GAVRILOVIC, P

机构：

[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] POLAROID CORP,CAMBRIDGE,MA 02139

[4] AMOCO RES & DEV,NAPERVILLE,IL 60566

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 01期

关键词：

D O I：

10.1007/BF02652233

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：53 / 56

页数：4

共 11 条

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