OVERCOMPENSATED SURFACE-LAYER IN NORMAL-GAAS DUE TO ANODIC-OXIDATION

被引：8

作者：

KAMIENIECKI, E

COOPERMAN, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：453 / 455

页数：3

共 9 条

[1] STUDY OF GAAS-OXIDE INTERFACE BY TRANSIENT CAPACITANCE SPECTROSCOPY - DISCRETE ENERGY INTERFACE STATES
KAMIENIECKI, E
KAZIOR, TE
LAGOWSKI, J
GATOS, HC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1041 - 1044
[2] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022
[3] MILLER GL, 1977, ANNU REV MATER SCI, P377
[4] SMALL-SIGNAL ADMITTANCE OF INSULATOR N-TYPE GALLIUM-ARSENIDE INTERFACE REGION
QUAST, W
[J]. ELECTRONICS LETTERS, 1972, 8 (16) : 419 - &
[5] INTERFACE STATE BAND BETWEEN GAAS AND ITS ANODIC NATIVE OXIDE
SAWADA, T
HASEGAWA, H
[J]. THIN SOLID FILMS, 1979, 56 (1-2) : 183 - 200
[6] SIMMONS JG, 1973, SOLID STATE ELECTRON, V16, P43, DOI 10.1016/0038-1101(73)90124-X
[7] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES
SPICER, WE
LINDAU, I
SKEATH, P
SU, CY
CHYE, P
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (06) : 420 - 423
[8] UNIFIED DEFECT MODEL AND BEYOND
SPICER, WE
LINDAU, I
SKEATH, P
SU, CY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1019 - 1027
[9] SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9