INTERFACE STATE BAND BETWEEN GAAS AND ITS ANODIC NATIVE OXIDE

被引：75

作者：

SAWADA, T

HASEGAWA, H

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo

来源：

THIN SOLID FILMS | 1979年 / 56卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(79)90063-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The basic interface properties of GaAs metal-oxide-semiconductor (MOS) structures formed using an anodic oxidation process in a mixed solution of glycol and water (the AGW process) were investigated. Detailed measurements of the capacitance-voltage and conductance-voltage characteristics and the transient behaviour of the thermal and optical MOS capacitance revealed various anomalies which are not encountered in the silicon MOS system. On the basis of an analysis of such anomalies an interface state band (ISB) model is presented for the GaAs-anodic oxide MOS system, and the origin and properties of the ISB are discussed. The present ISB does not pin the surface Fermi potential but severely limits the range of its movement at steady state to the lower half of the energy gap. © 1979.

引用

页码：183 / 200

页数：18

共 36 条

[1] FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES
BAYRAKTAROGLU, B
KOHN, E
HARTNAGEL, HL
[J]. ELECTRONICS LETTERS, 1976, 12 (02) : 53 - 54
[2] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[3] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
GRAY, PV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +
[4] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS
CHANG, CC
SCHWARTZ, B
MURARKA, SP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 922 - 926
[5] PLASMA OXIDATION OF GAAS
CHANG, RPH
SINHA, AK
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 56 - 58
[6] OXYGEN SORPTION AND EXCITONIC EFFECTS ON GAAS SURFACES
CHYE, PW
PIANETTA, P
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 917 - 919
[7] MECHANISM OF GAAS ANODIZATION
COLEMAN, DJ
SHAW, DW
DOBROTT, RD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 239 - 241
[8] FRITZSCHE D, 1976, APR FRUHJ TAG DTSCH
[9] SURFACE STATE BAND ON GAAS (110) FACE
GREGORY, PE
SPICER, WE
CIRACI, S
HARRISON, WA
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 511 - 514
[10] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER
HASEGAWA, H
HARTNAGEL, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723

← 1 2 3 4 →