BAND-STRUCTURE-DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS

[31] TRANSPORT PROPERTIES OF GAAS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 921 - +

[32] IONIZATION RATES IN (ALXGA1-X)AS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4743 - &

[33] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 35 - +

[34] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1677 - 1683

[35] UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 471 - 474

[36] STILLMAN GE, 1977, SEMICONDUCTORS SEMIM, V12

[37] SZE SM, 1969, PHYSICS SEMICONDUCTO

[38] VINSON PJ, 1976, 23TH P INT C PHYS SE

[39] THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (06): : 1415 - 1420

[31] TRANSPORT PROPERTIES OF GAAS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 921 - +

[32] IONIZATION RATES IN (ALXGA1-X)AS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4743 - &

[33] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 35 - +

[34] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1677 - 1683

[35] UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 471 - 474

[36] STILLMAN GE, 1977, SEMICONDUCTORS SEMIM, V12

[37] SZE SM, 1969, PHYSICS SEMICONDUCTO

[38] VINSON PJ, 1976, 23TH P INT C PHYS SE

[39] THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (06): : 1415 - 1420