DEPENDENCE OF SI-SIO2 BARRIER HEIGHT ON SIO2 THICKNESS IN MOS TUNNEL STRUCTURES

被引：45

作者：

KASPRZAK, LA

LAIBOWITZ, RB

OHRING, M

机构：

[1] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[3] STEVENS INST TECHNOL,HOBOKEN,NJ 07030

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.323415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4281 / 4286

页数：6

相关论文

共 43 条

[1] BALK P, 1970, J ELECTROCHEM SOC, V117, P372
[2] STUDIES OF TUNNEL MOS DIODES .2. THERMAL EQUILIBRIUM CONSIDERATIONS
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1602 - +
[3] CARD HC, 1971, J PHYS D, V4, P1159
[4] AUGER AND ELLIPSOMETRIC STUDY OF PHOSPHORUS SEGREGATION IN OXIDIZED DEGENERATE SILICON
CHOU, NJ
VANDERME.YJ
HAMMER, R
CAHILL, J
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (04) : 200 - 202
[5] CHOW CK, 1965, J APPL PHYS, V36, P599
[6] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES
CHU, TL
SZEDON, JR
LEE, CH
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &
[7] ESCA STUDY OF OXIDE AT SI-SIO2 INTERFACE
CLARKE, RA
TAPPING, RL
HOPPER, MA
YOUNG, L
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1347 - 1350
[8] TUNNELING INTO INTERFACE STATES OF MOS STRUCTURES
DAHLKE, WE
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (10) : 261 - &
[9] TUNNELING IN METAL-OXIDE-SILICON STRUCTURES
DAHLKE, WE
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 865 - &
[10] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
DEAL, BE
GROVE, AS
SNOW, EH
SAH, CT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 308 - &

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