DEPENDENCE OF SI-SIO2 BARRIER HEIGHT ON SIO2 THICKNESS IN MOS TUNNEL STRUCTURES

被引：45

作者：

KASPRZAK, LA

LAIBOWITZ, RB

OHRING, M

机构：

[1] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[3] STEVENS INST TECHNOL,HOBOKEN,NJ 07030

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.323415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4281 / 4286

页数：6

相关论文

共 43 条

[21] LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) OF SIO2-SI INTERFACE
HARRINGTON, WL
HONIG, RE
GOODMAN, AM
WILLIAMS, R
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 644 - 645
[22] TUNNELING THROUGH ASYMMETRIC BARRIERS
HARTMAN, TE
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (11) : 3283 - &
[23] THE ELECTRIC TUNNEL EFFECT ACROSS THIN INSULATOR FILMS IN CONTACTS
HOLM, R
[J]. JOURNAL OF APPLIED PHYSICS, 1951, 22 (05) : 569 - 574
[24] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING
HU, SM
KERR, DR
GREGOR, LV
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (03) : 97 - &
[25] KASPRZAK LA, 1974, 1974 EL SOC SPR M SA
[26] KASPRZAK LA, 1972, THESIS STEVENS I TEC
[27] KITTEL C, 1967, INTRO SOLID STATE PH, P280
[28] TUNNELING IN METAL-GLASS-SILICON STRUCTURES
LAIBOWIT.RB
[J]. APPLIED PHYSICS LETTERS, 1968, 13 (07) : 221 - &
[29] TUNNELING IN ULTRATHIN GLASS FILMS
LAIBOWITZ, RB
ELDRIDGE, JM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 714 - +
[30] MACGRACKIN FL, 1969, NBS479 TECH NOT

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