STUDIES OF INSB METAL-OXIDE-SEMICONDUCTOR STRUCTURE FABRICATED BY PHOTOCHEMICAL VAPOR-DEPOSITION USING SI2H6 AND N2O

Silicon oxide films (SiO(x),0 < x < 2) have been prepared by photolysis of disilane (Si2H6) with nitrous oxide (N2O) at temperature below 200-degrees-C using 2537-A ultraviolet light. Ellipsometric studies prove that the refractive index and etching rate of the photo-oxide films depend on the substrate temperatures and gas ratio. Composition and electrical properties of the interface (SiO(x)/InSb) are discussed by using Auger electron spectroscopy and metal-oxide-semiconductor capacitors. Hysteresis-free capacitance-voltage characteristics measured at 77 K are attained and the minimum interface state density is only 1.5 X 10(11) cm-2 eV-1.