INDUCED DC NEGATIVE RESISTANCE IN AVALANCHE DIODES

被引：3

作者：

CLORFEINE, AS

HUGHES, RD

机构：

[1] RCA Laboratories David Samoff Research Ctr., Princeton

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 05期

关键词：

D O I：

10.1109/PROC.1969.7113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dc current-voltage curves obtained for silicon avalanche diodes capable of oscillating in the high-power anomalous mode show no evidence of a truly static negative resistance; however. a dc negative resistance can be induced by transit-time oscillations and is responsible for yet another mode of oscillation. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：841 / +

页数：1

共 7 条

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[2]

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[5] NEGATIVE RESISTANCE AND FILAMENTARY CURRENTS IN AVALANCHING SILICON P+-I-N+ JUNCTIONS [J].

MULLER, MW ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (08) :560-+

[6]

PRAGER HJ, 1967 P C HIGH FREQ G, P266

[7] AN EFFICIENT MULTIRESONANT AVALANCHE DIODE OSCILLATOR IN 1.5 TO 11 GHZ RANGE [J].

SNAPP, CP ;

HOEFFLINGER, B .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11) :2054-+

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