ANNEALING AG ON GAAS - INTERPLAY BETWEEN CLUSTER FORMATION AND FERMI LEVEL UNPINNING

被引：6

作者：

CHIANG, TT

WAHI, AK

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584587

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：958 / 963

页数：6

共 18 条

[1] METAL CLUSTER FORMATION ON GAAS(110) - A TEMPERATURE-DEPENDENCE STUDY [J].

CAO, R ;

MIYANO, K ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1975-1982

[2]

CHIANG TC, UNPUB

[3] REVERSIBILITY OF FERMI LEVEL PINNING [J].

CHIANG, TT ;

SPINDT, CJ ;

SPICER, WE ;

LINDAU, I ;

BROWNING, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1409-1415

[4] ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER FORMATION OF AG ON N-TYPE GAAS(110) [J].

CHIN, KK ;

PAN, SH ;

MO, D ;

MAHOWALD, P ;

NEWMAN, N ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1985, 32 (02) :918-923

[5] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

[6] IONICITY AND THEORY OF SCHOTTKY BARRIERS [J].

LOUIE, SG ;

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1977, 15 (04) :2154-2162

[7] SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110) [J].

LUDEKE, R ;

CHIANG, TC ;

MILLER, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :581-587

[8] A SUBSTRATE DOPING VARIATION STUDY OF THE PINNING STATES AT METAL GAAS(110) INTERFACES [J].

MIYANO, KE ;

CAO, R ;

KENDELEWICZ, T ;

SPINDT, CJ ;

MAHOWALD, PH ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1403-1408

[9] CRYSTALLOGRAPHY OF IN ON GAAS(110) - POSSIBLE RELATIONSHIP OF LATERALLY INHOMOGENEOUS STRUCTURE TO FERMI-LEVEL PINNING [J].

SAVAGE, DE ;

LAGALLY, MG .

PHYSICAL REVIEW LETTERS, 1985, 55 (09) :959-962

[10] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF THE GROWTH OF IN ON GAAS(110) AT DIFFERENT TEMPERATURES [J].

SAVAGE, DE ;

LAGALLY, MG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :943-954

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