REVERSIBILITY OF FERMI LEVEL PINNING

被引：15

作者：

CHIANG, TT ^{[1
]}

SPINDT, CJ ^{[1
]}

SPICER, WE ^{[1
]}

LINDAU, I ^{[1
]}

BROWNING, R ^{[1
]}

机构：

[1] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1409 / 1415

页数：7

共 32 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[3] OXYGEN-CHEMISORPTION ON GAAS(110) - SURFACE OR SUBSURFACE GROWTH
BERTNESS, KA
FRIEDMAN, DJ
MAHOWALD, PH
YEH, JJ
WAHI, AK
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1102 - 1108
[4] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[5] RATIOED SCATTER DIAGRAMS - AN EROTETIC METHOD FOR PHASE IDENTIFICATION ON COMPLEX-SURFACES USING SCANNING AUGER MICROSCOPY
BROWNING, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (04): : 1453 - 1456
[6] BROWNING R, IN PRESS
[7] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES
CAO, R
MIYANO, K
KENDELEWICZ, T
CHIN, KK
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 998 - 1002
[8] ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER FORMATION OF AG ON N-TYPE GAAS(110)
CHIN, KK
PAN, SH
MO, D
MAHOWALD, P
NEWMAN, N
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1985, 32 (02): : 918 - 923
[9] CHIN KK, 1986, MATER RES SOC S P, V54, P341
[10] CHIN KK, 1987, MATER RES SOC S P, V77, P297