PHOTOLUMINESCENCE OF UNINTENTIONALLY DOPED AND N-DOPED 3C-SIC GROWN BY CHEMICAL VAPOR-DEPOSITION

被引：6

作者：

OKUMURA, H ^{[1
]}

SHINOHARA, M ^{[1
]}

MUNEYAMA, E ^{[1
]}

DAIMON, H ^{[1
]}

YAMANAKA, M ^{[1
]}

SAKUMA, E ^{[1
]}

MISAWA, S ^{[1
]}

ENDO, K ^{[1
]}

YOSHIDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 01期

关键词：

D O I：

10.1143/JJAP.27.L116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L116 / L118

页数：3

共 16 条

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[3] DAIMON H, IN PRESS APPL PHYS L
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[5] PHOTOLUMINESCENCE SPECTROSCOPY OF ION-IMPLANTED 3C-SIC GROWN BY CHEMICAL VAPOR-DEPOSITION
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[7] EXPERIMENTAL 3C-SIC MOSFET
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[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 404 - 406
[8] FREE-TO-BOUND TRANSITION IN BETA-SIC DOPED WITH BORON
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02): : 739 - 746
[9] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS
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[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +
[10] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

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