A 20 GHZ BANDWIDTH INGAASP/INP MTBH LASER MODULE

被引：6

作者：

ATLAS, DA

ROSIEWICZ, A

机构：

[1] Laserton, Inc., Burlington

[2] Micracor, Concord, MA 01742

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 02期

关键词：

D O I：

10.1109/68.195978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 13 mum InGaAsP/InP straight-wall mass-transport buried heterostructure laser diode was designed and fabricated to operate over a bandwidth of 20 GHz. The laser when used in a microwave link has an RF insertion loss of 37 dB, an equivalent input noise density of less than -115 dBm/Hz, input power at 1 dB compression greater than 23 dBm and a spurious signal free dynamic range of 97 dB.Hz2/3. The wide bandwidth, high dynamic range, and low-noise of the laser module was obtained through the design of the package, the subcarrier, and the laser chip.

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页码：123 / 125

页数：3

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