CHARACTERIZATION OF GAAS CRYSTALS WITH DIFFERENT DEGREES OF COMPENSATION - ELECTRONIC RAMAN-SCATTERING OF PHOTONEUTRALIZED ACCEPTORS

被引：4

作者：

WAGNER, J

SEELEWIND, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2761 / 2764

页数：4

共 13 条

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[7]

Pinczuk A, 1984, LIGHT SCATTERING SOL, VIV, P5

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APPLIED PHYSICS LETTERS, 1986, 49 (17) :1080-1082

[9] RAMAN-SPECTROSCOPIC STUDY OF RESIDUAL ACCEPTORS IN SEMI-INSULATING BULK GAAS [J].

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CLARK, J .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :802-807

[10] RAMAN-SCATTERING AS A QUANTITATIVE TOOL FOR RESIDUAL ACCEPTOR ASSESSMENT IN SEMIINSULATING GAAS [J].

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SEELEWIND, H ;

KAUFMANN, U .

APPLIED PHYSICS LETTERS, 1986, 48 (16) :1054-1056

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