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FREQUENCY-DEPENDENCE OF ELECTRON CONDUCTIVITY IN SILICON INVERSION LAYER IN METALLIC AND LOCALIZED REGIMES - COMMENT

被引：5
作者：
ARNOLD, E
机构：
来源：
PHYSICAL REVIEW B | 1978年 / 17卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.17.4111
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4111 / 4113
页数：3
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