MISMATCHED INGAAS/INP AND INALAS/INP HETEROSTRUCTURES WITH HIGH CRYSTALLINE QUALITY

被引：19

作者：

BENNETT, BR ^{[1
]}

DELALAMO, JA ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 07期

关键词：

D O I：

10.1063/1.352963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mismatched epitaxial layers of InxGa1-xAs and InyAl1-yAs were grown on InP by molecular beam epitaxy. Samples were characterized by high-resolution x-ray diffraction to assess layer quality as well as composition and strain. Measurement of epitaxial layer peak width is shown to be a sensitive, nondestructive means to judge the structural quality of a strained heterostructure. We find that for lattice mismatch of +/- 1 % or less, the crystalline quality of epitaxial layers of InGaAs and InAlAs consistently remains high to thicknesses up to 3-9 times the Matthews-Blakeslee [J. Cryst. Growth 27, 118 (1974)] critical layer thickness. The findings are applied to the design and growth of high-performance mismatched InAlAs/InGaAs/InP heterostructure field-effect transistors.

引用

页码：3195 / 3202

页数：8

共 36 条

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