DISORDERING OF ZNSE/ZNS STRAINED-LAYER SUPERLATTICES BY SI ION-IMPLANTATION

被引：9

作者：

SAITOH, T

YOKOGAWA, T

NARUSAWA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.101790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：735 / 737

页数：3

共 8 条

[1] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J].

CASEY, HC ;

PANISH, MB ;

CHANG, LL .

PHYSICAL REVIEW, 1967, 162 (03) :660-+

[2] KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES [J].

CIBERT, J ;

PETROFF, PM ;

WERDER, DJ ;

PEARTON, SJ ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :223-225

[3]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[4] SI-INDUCED DISORDERING OF IN0.53GA0.47AS/IN0.52AL0.48AS MULTIQUANTUM WELL STRUCTURES [J].

MIYAZAWA, T ;

KAWAMURA, Y ;

MIKAMI, O .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09) :L1731-L1733

[5] INGAAS/INP SUPERLATTICE MIXING INDUCED BY ZN OR SI DIFFUSION [J].

SCHWARZ, SA ;

MEI, P ;

VENKATESAN, T ;

BHAT, R ;

HWANG, DM ;

SCHWARTZ, CL ;

KOZA, M ;

NAZAR, L ;

SKROMME, BJ .

APPLIED PHYSICS LETTERS, 1988, 53 (12) :1051-1053

[6] DOSE-DEPENDENT MIXING OF ALAS-GAAS SUPERLATTICES BY SI ION-IMPLANTATION [J].

VENKATESAN, T ;

SCHWARZ, SA ;

HWANG, DM ;

BHAT, R ;

KOZA, M ;

YOON, HW ;

MEI, P ;

ARAKAWA, Y ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1986, 49 (12) :701-703

[7] ZNSE/ZNS HETEROEPITAXIAL GROWTH USING AN INTERMEDIATE STRAINED-LAYER SUPERLATTICE BUFFER [J].

YOKOGAWA, T ;

OGURA, M ;

KAJIWARA, T .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) :2843-2847

[8] LOW-LOSS SHORT-WAVELENGTH OPTICAL WAVE-GUIDES USING ZNSE-ZNS STRAINED-LAYER SUPERLATTICES [J].

YOKOGAWA, T ;

OGURA, M ;

KAJIWARA, T .

APPLIED PHYSICS LETTERS, 1988, 52 (02) :120-122

← 1 →