TEMPERATURE-DEPENDENCE OF MASKLESS ION-BEAM ASSISTED ETCHING OF INP AND SI USING FOCUSED ION-BEAM

被引：17

作者：

OCHIAI, Y

GAMO, K

NAMBA, S

SHIHOYAMA, K

MASUYAMA, A

SHIOKAWA, T

TOYODA, K

机构：

[1] TOYO UNIV,FAC ENGN,KAWAGOE,SAITAMA 350,JAPAN

[2] INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 01期

关键词：

D O I：

10.1116/1.583918

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：423 / 426

页数：4

共 10 条

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[7] MASKLESS ION-BEAM ASSISTED ETCHING OF SI USING CHLORINE GAS [J].

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[8] CHARACTERISTICS OF MASKLESS ION-BEAM ASSISTED ETCHING OF SILICON USING FOCUSED ION-BEAMS [J].

OCHIAI, Y ;

SHIHOYAMA, K ;

SHIOKAWA, T ;

TOYODA, K ;

MASUYAMA, A ;

GAMO, K ;

NAMBA, S .

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[9] HIGH-DOSE RATE EFFECT OF FOCUSED-ION-BEAM BORON IMPLANTATION INTO SILICON [J].

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