STUDY OF LITHIUM MOBILITY IN IRRADIATED SILICON

被引：3

作者：

HACKLER, WA

KIKUCHI, C

机构：

来源：

NUCLEAR SCIENCE AND ENGINEERING | 1968年 / 31卷 / 02期

关键词：

D O I：

10.13182/NSE68-A18229

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

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页码：175 / +

页数：1

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