SIMULTANEOUS OBSERVATION OF STARK-WANNIER AND FRANZ-KELDYSH REGIMES FOR DIFFERENT TYPES OF CARRIERS IN INXGA1-XAS/GAAS SUPERLATTICES

被引：11

作者：

INOKI, CK ^{[1
]}

RIBEIRO, E ^{[1
]}

LEMOS, V ^{[1
]}

CERDEIRA, F ^{[1
]}

FINNIE, P ^{[1
]}

ROTH, AP ^{[1
]}

机构：

[1] NATL RES COUNCIL,INST MICROSTRUCT DEVICES,OTTAWA K1A 0R6,ON,CANADA

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.49.2246

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We performed low-temperature (77 K) photomodulated transmission in two different InxGa1-xAs/GaAs superlattices with fixed built-in fields. Sample parameters are such that in one of them electrons are in the Stark-Wannier field regime while in the other they are in the Franaz-Keldysh regime. In both samples, however, light holes are seen to be in the Franz-Keldysh regime. From this we infer that the light-hole valence bands are essentially lined up on both sides of the InxGa1-xAs/GaAs heterojunction.

引用

页码：2246 / 2249

页数：4

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