PHOTO-LUMINESCENCE OF COPPER-COMPENSATED P-TYPE GAAS AFTER IRRADIATION BY 2.2 MEV ELECTRONS

被引：7

作者：

GLINCHUK, KD

LUKAT, K

PROKHOROVICH, AV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 71卷 / 01期

关键词：

D O I：

10.1002/pssa.2210710127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：233 / 238

页数：6

共 13 条

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[7] EFFECT OF 0.94, 1.0, 1.2, AND 1.3 EV RADIATIVE CENTERS ON INTRINSIC LUMINESCENCE INTENSITY IN N-GAAS [J].

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