EFFECT OF THE DISSOLVED-OXYGEN CONCENTRATION ON THE GROWTH OF THIN OXIDE-FILMS ON SILICON

被引：4

作者：

MURALI, V

MURARKA, SP

机构：

来源：

关键词：

D O I：

10.1063/1.337479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4327 / 4329

页数：3

共 6 条

[1]

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[4] DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J].

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[5] KINETICS OF ULTRATHIN SIO2 GROWTH [J].

MURALI, V ;

MURARKA, SP .

[6] NITROGEN REACTION AT A SILICON-SILICON DIOXIDE INTERFACE [J].

RAIDER, SI ;

GDULA, RA ;

PETRAK, JR .