ROOM-TEMPERATURE PHOTOREFLECTANCE AS AN EFFICIENT TOOL FOR STUDY OF THE CRYSTALLINE QUALITY OF INALAS LAYERS GROWN ON INP SUBSTRATES

被引：3

作者：

MONEGER, S ^{[1
]}

TABATA, A ^{[1
]}

BRU, C ^{[1
]}

GUILLOT, G ^{[1
]}

GEORGAKILAS, A ^{[1
]}

ZEKENTES, K ^{[1
]}

HALKIAS, G ^{[1
]}

机构：

[1] FDN RES & TECHNOL HELLAS,INST ELECTR STRUCT & LASER,GR-71110 IRAKLION,GREECE

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 12期

关键词：

D O I：

10.1063/1.110726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoreflectance and photoluminescence experiments have been performed on molecular beam epitaxy (MBE) grown InAlAs layers lattice matched to InP substrates in order to evaluate the influence of the growth temperature on the crystalline quality of this material. The study of the photoreflectance broadening parameter at room temperature provides the same indication on crystalline quality as the well-known linewidth broadening of the photoluminescence at cryogenic temperatures. We show that the best material quality is obtained for the MBE growth temperature of 530-degrees-C.

引用

页码：1654 / 1656

页数：3

共 16 条

[1] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].

ASPNES, DE .

SURFACE SCIENCE, 1973, 37 (01) :418-442

[2]

BOTTKA N, 1988, J ELECTRON MATER, V17, P2

[3] THE EFFECT OF INHIBITED GROWTH-KINETICS ON GAINAS AND ALLNAS ALLOY AND INTERFACE QUALITY [J].

BROWN, AS ;

DELANEY, MJ ;

SINGH, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02) :384-387

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY IN0.52AL0.48AS AND IN1-X-YGAXALYAS [J].

CHIN, A ;

BHATTACHARYA, P ;

HONG, WP ;

LI, WQ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :665-667

[5] THE GROWTH AND CHARACTERIZATION OF NOMINALLY UNDOPED AL1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

KERR, T ;

TUPPEN, CG ;

WAKEFIELD, B ;

ANDREWS, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :219-223

[6] BAND-GAP DETERMINATION BY PHOTOREFLECTANCE OF INGAAS AND INALAS LATTICE MATCHED TO INP [J].

GASKILL, DK ;

BOTTKA, N ;

AINA, L ;

MATTINGLY, M .

APPLIED PHYSICS LETTERS, 1990, 56 (13) :1269-1271

[7]

GEORGAKILAS A, 1992, 16TH P STAT ART PROG, V20, P141

[8] ELECTROMODULATION SPECTROSCOPY OF CONFINED SYSTEMS [J].

GLEMBOCKI, OJ ;

SHANABROOK, BV .

SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (04) :603-607

[9] CHARACTERIZATION OF GA0.47IN0.53AS AND AL0.48IN0.52AS LAYERS GROWN LATTICE MATCHED ON INP BY MOLECULAR-BEAM EPITAXY [J].

MASSIES, J ;

ROCHETTE, JF ;

ETIENNE, P ;

DELESCLUSE, P ;

HUBER, AM ;

CHEVRIER, J .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :101-107

[10] THE DEPENDENCE OF THE ELECTRICAL AND OPTICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIAL IN0.52AL0.48AS ON GROWTH-PARAMETERS - INTERPLAY OF SURFACE KINETICS AND THERMODYNAMICS [J].

OH, JE ;

BHATTACHARYA, PK ;

CHEN, YC ;

AINA, O ;

MATTINGLY, M .

JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (05) :435-441

← 1 2 →