CHARACTERIZATION OF GA0.47IN0.53AS AND AL0.48IN0.52AS LAYERS GROWN LATTICE MATCHED ON INP BY MOLECULAR-BEAM EPITAXY

被引：25

作者：

MASSIES, J ^{[1
]}

ROCHETTE, JF ^{[1
]}

ETIENNE, P ^{[1
]}

DELESCLUSE, P ^{[1
]}

HUBER, AM ^{[1
]}

CHEVRIER, J ^{[1
]}

机构：

[1] THOMSON CSF,CENT RES LAB,F-91401 ORSAY,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90255-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：101 / 107

页数：7

共 17 条

[1] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6328-6330

[2] SILICON DOPING AND IMPURITY PROFILES IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHENG, KY ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4411-4415

[3] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

HECKINGBOTTOM, R ;

OHNO, H ;

WOOD, CEC ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :290-292

[4]

GARDNER PD, 1983, I PHYS C SER, V65, P399

[5] METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP [J].

HUBER, A ;

LINH, NT .

JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) :80-84

[6]

HUBER AM, UNPUB REV PHYSIQUE A

[7]

ISHII K, 1982, ELECTRON LETT, V28, P1034

[8] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J].

LAVIRON, M ;

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

ETIENNE, P ;

CHAPLART, J ;

LINH, NT .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :530-532

[9] IN0.53GA0.47AS N-CHANNEL NATIVE OXIDE INVERSION MODE FIELD-EFFECT TRANSISTOR [J].

LIAO, ASH ;

TELL, B ;

LEHENY, RF ;

CHANG, TY .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :280-282

[10] SILVER CONTACT ON GAAS (001) AND INP (001) [J].

MASSIES, J ;

DEVOLDERE, P ;

LINH, NT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1353-1357

← 1 2 →