CYCLOTRON RESONANCE AND HALL MEASUREMENTS ON HOLE CARRIERS IN GAAS

[1] CYCLOTRON RESONANCE AT 4 MM WAVELENGTH [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (504): : 1078 - &

[2] INTER-VALENCE-BAND TRANSITIONS IN UNIAXIALLY STRESSED GE AND GAAS [J]. PHYSICAL REVIEW, 1969, 177 (03): : 1173 - &

[3] CARDONA M, 1965, J PHYS CHEM SOLIDS, V26, P1351

[4] BAND PARAMETERS OF SEMICONDUCTORS WITH ZINCBLENDE, WURTZITE, AND GERMANIUM STRUCTURE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) : 1543 - &

[5] FREE-CARRIER RADIATION PEAK IN GAAS DUE TO VALENCE-BAND MAXIMA ARISING FROM TERMS LINEAR IN K [J]. PHYSICAL REVIEW, 1969, 187 (03): : 1181 - &

[6] POLLAK FH, 1966, J PHYS SOC JPN, VS 21, P20

[7] PHOTOLUMINESCENCE OF CU-DOPED GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4895 - &

[8] PROPERTIES OF P-TYPE GAAS PREPARED BY COPPER DIFFUSION [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 1105 - 1108

[9] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P): : 263 - &

[10] CYCLOTRON RESONANCE OF HOLES IN GASB [J]. PHYSICS LETTERS, 1966, 20 (03): : 217 - &

[1] CYCLOTRON RESONANCE AT 4 MM WAVELENGTH [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (504): : 1078 - &

[2] INTER-VALENCE-BAND TRANSITIONS IN UNIAXIALLY STRESSED GE AND GAAS [J]. PHYSICAL REVIEW, 1969, 177 (03): : 1173 - &

[3] CARDONA M, 1965, J PHYS CHEM SOLIDS, V26, P1351

[4] BAND PARAMETERS OF SEMICONDUCTORS WITH ZINCBLENDE, WURTZITE, AND GERMANIUM STRUCTURE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) : 1543 - &

[5] FREE-CARRIER RADIATION PEAK IN GAAS DUE TO VALENCE-BAND MAXIMA ARISING FROM TERMS LINEAR IN K [J]. PHYSICAL REVIEW, 1969, 187 (03): : 1181 - &

[6] POLLAK FH, 1966, J PHYS SOC JPN, VS 21, P20

[7] PHOTOLUMINESCENCE OF CU-DOPED GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4895 - &

[8] PROPERTIES OF P-TYPE GAAS PREPARED BY COPPER DIFFUSION [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 1105 - 1108

[9] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P): : 263 - &

[10] CYCLOTRON RESONANCE OF HOLES IN GASB [J]. PHYSICS LETTERS, 1966, 20 (03): : 217 - &