TURN-ON MECHANISM OF A MICROPLASMA

被引:16
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KIMURA, C
NISHIZAWA, JI
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10.1143/JJAP.7.1453
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O59 [应用物理学];
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页码:1453 / +
页数:1
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[1]   STATISTICAL THEORY OF AVALANCHE BREAKDOWN IN SILICON [J].
BURGESS, RE .
CANADIAN JOURNAL OF PHYSICS, 1959, 37 (06) :730-738
[2]   MICROPLASMA FLUCTUATIONS IN SILICON [J].
CHAMPLIN, KS .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) :1039-1050
[3]   PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1956, 102 (02) :369-376
[4]   VOLTAGE DEPENDENCE OF MICROPLASMA DENSITY IN P-N JUNCTIONS IN SILICON [J].
GOETZBERGER, A ;
STEPHENS, C .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) :2646-&
[6]   AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS [J].
HAITZ, RH ;
GOETZBERGER, A ;
SCARLETT, RM ;
SHOCKLEY, W .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1581-&
[7]   MODEL FOR ELECTRICAL BEHAVIOR OF MICROPLASMA [J].
HAITZ, RH .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) :1370-&
[8]  
KAWASHIMA M, 1964, NATIONAL CONVENTION, pS5
[9]   VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .1. [J].
KIKUCHI, M ;
TACHIKAWA, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) :835-848
[10]   MEASUREMENTS OF INTERNAL PARAMETERS OF A MICROPLASMA [J].
KIMURA, C ;
NISHIZAWA, JI .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (05) :369-+