MEASUREMENTS OF INTERNAL PARAMETERS OF A MICROPLASMA

被引：2

作者：

KIMURA, C

NISHIZAWA, JI

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1966年 / 5卷 / 05期

关键词：

D O I：

10.1143/JJAP.5.369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：369 / +

页数：1

共 16 条

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GOETZBERGER, A ;

SCARLETT, RM ;

HAITZ, RH ;

MCDONALD, B .

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GOETZBERGER, A ;

STEPHENS, C .

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[5] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS [J].

HAITZ, RH ;

GOETZBERGER, A ;

SCARLETT, RM ;

SHOCKLEY, W .

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[6] MICROPLASMA INTERACTION IN SILICON P-N JUNCTIONS [J].

HAITZ, RH .

SOLID-STATE ELECTRONICS, 1964, 7 (06) :439-&

[7] MODEL FOR ELECTRICAL BEHAVIOR OF MICROPLASMA [J].

HAITZ, RH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) :1370-&

[8] VARIATION OF JUNCTION BREAKDOWN VOLTAGE BY CHARGE TRAPPING [J].

HAITZ, RH .

PHYSICAL REVIEW, 1965, 138 (1A) :A260-&

[9] THEORY OF MICROPLASMA INSTABILITY IN SILICON [J].

MCINTYRE, RJ .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :983-&

[10]

NISHIZAWA J, 1955, SCI REP RITU B, V6, P183

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