PHOTOELECTROCHEMICAL ETCHING OF 3-DIMENSIONAL STRUCTURES IN SILICON

[1] [Anonymous], SEMICONDUCTOR ELECTR

[2] ANISOTROPIC LASER ETCHING OF OXIDIZED (100) SILICON [J]. APPLIED PHYSICS LETTERS, 1989, 54 (03) : 225 - 227

[3] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1178 - 1185

[4] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[5] ETCHING OF DEEP GROOVES FOR THE PRECISE POSITIONING OF CLEAVES IN SEMICONDUCTOR-LASERS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 453 - 455

[6] EFFECTS OF DOPING AND ORIENTATION ON PHOTOELECTROCHEMICALLY ETCHED FEATURES IN N-GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (07) : 1855 - 1859

[7] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195

[8] EDDOWES MJ, 1990, J ELECTROANAL CHEM, V3280, P297

[9] FUNDAMENTAL-ASPECTS OF ELECTROPOLISHING [J]. ELECTROCHIMICA ACTA, 1987, 32 (01) : 1 - 11

[10] FAST PHOTOELECTROCHEMICAL ETCHING OF QUARTER-MICROMETER DIFFRACTION GRATINGS IN N-INP [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3402 - 3406

[1] [Anonymous], SEMICONDUCTOR ELECTR

[2] ANISOTROPIC LASER ETCHING OF OXIDIZED (100) SILICON [J]. APPLIED PHYSICS LETTERS, 1989, 54 (03) : 225 - 227

[3] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1178 - 1185

[4] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[5] ETCHING OF DEEP GROOVES FOR THE PRECISE POSITIONING OF CLEAVES IN SEMICONDUCTOR-LASERS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 453 - 455

[6] EFFECTS OF DOPING AND ORIENTATION ON PHOTOELECTROCHEMICALLY ETCHED FEATURES IN N-GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (07) : 1855 - 1859

[7] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195

[8] EDDOWES MJ, 1990, J ELECTROANAL CHEM, V3280, P297

[9] FUNDAMENTAL-ASPECTS OF ELECTROPOLISHING [J]. ELECTROCHIMICA ACTA, 1987, 32 (01) : 1 - 11

[10] FAST PHOTOELECTROCHEMICAL ETCHING OF QUARTER-MICROMETER DIFFRACTION GRATINGS IN N-INP [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3402 - 3406