ALKALI-DEVELOPABLE SILICONE-BASED POSITIVE RESIST FOR ELECTRON-BEAM LITHOGRAPHY

被引：3

作者：

BAN, H ^{[1
]}

TANAKA, A ^{[1
]}

IMAMURA, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, BAS RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 11期

关键词：

D O I：

10.1143/JJAP.27.L2137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2137 / L2138

页数：2

共 11 条

[1]

BOWDEN MJ, 1981, SOLID STATE TECHNOL, V24, P73

[2] ELECTRON-IRRADIATION OF POLY(OLEFIN SULFONES) - APPLICATION TO ELECTRON-BEAM RESISTS [J].

BOWDEN, MJ ;

THOMPSON, LF .

JOURNAL OF APPLIED POLYMER SCIENCE, 1973, 17 (10) :3211-3221

[3] A SENSITIVE NOVOLAC-BASED POSITIVE ELECTRON RESIST [J].

BOWDEN, MJ ;

THOMPSON, LF ;

FAHRENHOLTZ, SR ;

DOERRIES, EM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1304-1313

[4] CONTRAST ENHANCEMENT IN MULTICOMPONENT POLYMER SYSTEMS [J].

BOWDEN, MJ .

JOURNAL OF APPLIED POLYMER SCIENCE, 1981, 26 (04) :1421-1426

[5]

HATZAKIS M, 1981, P INT C MICROLITHOGR, P386

[6]

IMAMURA S, 1988, SPIE ADV RESIST TECH, V63, P920

[7] POLY (FLUORO METHACRYLATE) AS HIGHLY SENSITIVE, HIGH CONTRAST POSITIVE RESIST [J].

KAKUCHI, M ;

SUGAWARA, S ;

MURASE, K ;

MATSUYAMA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) :1648-1651

[8]

LIN BJ, 1983, SOLID STATE TECHNOL, V26, P105

[9] A NEW SILICONE-BASED NEGATIVE RESIST (SNR) FOR 2-LAYER RESIST SYSTEM [J].

MORITA, M ;

IMAMURA, S ;

TANAKA, A ;

TAMAMURA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2402-2406

[10]

SHIRAISHI H, 1987, ACS SYM SER, V346, P77

← 1 2 →