HIGH HOLE MOBILITY IN STRAINED GE CHANNEL OF MODULATION-DOPED P-SI0.5GE0.5/GE/SI1-XGEX HETEROSTRUCTURE

被引：82

作者：

MIYAO, M

MURAKAMI, E

ETOH, H

NAKAGAWA, K

NISHIDA, A

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo, 185

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91106-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Characterization and application of a new heterostructure (p-Si0.5Ge0.5/Ge/Si1-xGe(x)) fabricated by MBE are comprehensively studied. The strain field in the Ge channel is precisely controlled by changing the X values in the Si1-xGe(x) buffer layer. This enables sufficient confinement of a 2D hole gas at the p-Si0.5Ge0.5/Ge interface. In addition, alloy scattering in the channel region is avoided by the utilization of a pure Ge layer. As a result, a p-channel MODFET with ultra high field effect mobility (10000 cm2/V.s, 77 K) is achieved.

引用

页码：912 / 915

页数：4

共 9 条

[1] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J].