PREPARATION OF THIN N-TYPE SILICON SPECIMENS FOR RADIATION DAMAGE STUDIES

The requirements of specimens for low energy electron radiation damage studies are becoming increasingly exacting. A specimen preparation technique is described which overcomes many of the practical problems encountered in preparing thin specimens from bulk silicon and of mounting ohmic contacts suitable for electrical measurements at 77°K. Several specimens can be prepared from a single slice and be of uniform thickness and as thin as 8 μm.